CENTRALE LYON - Post-Doctoral Position Ferroelectric-Based Ternary Computing: From Circuit Design to System-Level Integration Scientific Context

FranceFrance·Écullymid
DesignAdministration & Office Support
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Overview

Energy efficiency remains one of the foremost challenges in modern computing, spanning from edge IoT devices to high-performance data centers.

Technical Tools
DesignAdministration & Office Support

Energy efficiency remains one of the foremost challenges in modern computing, spanning from edge IoT devices to high-performance data centers. Conventional CMOS-based architectures are approaching fundamental physical limits, while the "memory wall" — data transfers between processor and memory accounting for 70 to 90% of total system energy — continues to worsen with the ever-growing demands of data-intensive workloads such as deep neural networks and signal processing pipelines.

In-Memory Computing (IMC) has emerged as a disruptive paradigm to overcome these bottlenecks by embedding arithmetic operations directly within memory arrays, drastically reducing data movement. In this landscape, ferroelectric field-effect transistors (FeFETs) stand out as particularly compelling devices: fully compatible with standard CMOS fabrication processes, non-volatile, reconfigurable, and capable of storing intermediate polarization states — a property that naturally enables ternary logic within a single device.

The Post-Doctoral position will cover at least one of the following tasks:

The ideal candidate holds a PhD in microelectronics, computer architecture, or a closely related field, and demonstrates at least one of the following hard skills:

  • Circuit and architecture design: Strong expertise in digital circuit design flows and computer architecture, with hands-on experience using industrial EDA tools (Cadence Virtuoso/Spectre, Synopsys). Experience with standard-cell library characterization is a plus.

  • Emerging memory technologies: Solid knowledge of non-volatile memory devices, preferably including ferroelectric materials (FeFET, FeCap) or resistive memories (RRAM, PCM). Familiarity with compact modeling is an asset.

  • System-level design and simulation: Experience with architecture-level simulation frameworks and hardware/software co-design methodologies. Knowledge of RISC-V ecosystems is a plus.

  • Application domains: Familiarity with deep neural network inference workloads and/or digital signal processing pipelines, particularly in the context of approximate or energy-constrained computing.

  • Programming: Proficiency in HDL (Verilog, VHDL, Verilog-A) and scripting languages (Python, Shell) for design automation and simulation.

Soft skills: Scientific leadership, ability to coordinate with PhD students and international partners, strong publication record consistent with career stage, and excellent written and oral communication in English.

Language: Fluent scientific English is mandatory. French is not required but is welcome.

Location & Eligibility

Where is the job
Écully, France
On-site at the office
Who can apply
FR

Listing Details

First seen
September 20, 2026
Last seen
October 8, 2026

Posting Health

Days active
17
Repost count
0
Trust Level
24%
Scored at
October 8, 2026

Signal breakdown

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CENTRALE LYON - Post-Doctoral Position Ferroelectric-Based Ternary Computing: From Circuit Design to System-Level Integration Scientific Context